Introduce the manufacturing technology of chip of GaN of rich full small high pressure

It is the common step of technology of production of chip of GaN of general maximum pressure below, technology of production of high-pressured GaN chip may have its unique part and technical innovation on this foundation:

Extension grows

• Material preparation: Choose right underlay stuff, wait like sapphirine, carborundum, regard GaN as growth foundation.
• Denotative layer grows: Through deposit of gas phase of metallic organic chemistry (MOCVD) wait for a technology, the GaN extension layer of ordinal on underlay crude long different structure and composition, include structure of trap of resilient coating, undesigned impure layer, N impure layer, quanta to wait. He Jing constitution measures the ply that controls denotative layer accurately, impure concentration, in order to obtain high-powered GaN data.

Clean

• Purify impurity: The GaN that comes out to extension undertakes be cleaninged strictly, spend in order to make sure exterior primary sub level is other and clean, layer of purify surface oxidation and smudgy. Use a variety of chemical reagents to undertake cleaning, if use purify of acetic acid, acetone, alcohol first organic matter, natrium of oxidation of ammonium of reoccupy ammonia water, vulcanization, hydrogen cleans oxide and blame organic matter, also can use hydrofluoric acid sometimes (HF) with hydrochloric acid (HCl) etc, divide oxide and HCl can reduce the leftover amount of oxygen element effectively, what HF can be caused effectively except carbon and hydrocarbon is smudgy.

Photoetching

• Gelatinize: Glue of a photoetching, it is a kind of sensitive to specific light polymer data normally.
• Exposure: The light of edition of film of use attack by surprise and specific wavelengh (like ultraviolet ray) undertake illuminate to photoetching glue, the figure on edition of film of attack by surprise move reachs on photoetching glue, make photoetching glue produces chemical change in exposure area.
• Develop: Pass chemical solution will not the photoetching glue purify after exposure or exposure, keep needs figure, these graphs will define each area of the chip in follow-up craft, if the active area of transistor, electrode contacts an area,wait.

Engrave corrode

• Dry method engraves corrode: Relatively commonly used, use inductance coupling plasma for example (ICP) ion of quarter corrode, reaction engraves corrode (RIE) or the electron is whirly resonance (ECR) the method such as quarter corrode. Produce in the quantity in, what use ICP technology at present is more, use commonly chloric base (Cl radical) gas. But also can use CH3+H2, quarter corrode child is Ga (CH3) 3, its have child volatile the characteristic with low rate of good, quarter corrode. Through engraving the GaN data that corrode purify does not need, the groove of the structure that forms transistor according to the graph on photoetching glue and circuit wiring.

Contact of semiconductor of metal of Xiao Te radical is formed

Bar is the common step of technology of production of chip of GaN of general maximum pressure below, technology of production of high-pressured GaN chip may have its unique part and technical innovation on this foundation:

Extension grows

• Material preparation: Choose right underlay stuff, wait like sapphirine, carborundum, regard GaN as growth foundation.
• Denotative layer grows: Through deposit of gas phase of metallic organic chemistry (MOCVD) wait for a technology, the GaN extension layer of ordinal on underlay crude long different structure and composition, include structure of trap of resilient coating, undesigned impure layer, N impure layer, quanta to wait. He Jing constitution measures the ply that controls denotative layer accurately, impure concentration, in order to obtain high-powered GaN data.

Clean

• Purify impurity: The GaN that comes out to extension undertakes be cleaninged strictly, spend in order to make sure exterior primary sub level is other and clean, layer of purify surface oxidation and smudgy. Use a variety of chemical reagents to undertake cleaning, if use purify of acetic acid, acetone, alcohol first organic matter, natrium of oxidation of ammonium of reoccupy ammonia water, vulcanization, hydrogen cleans oxide and blame organic matter, also can use hydrofluoric acid sometimes (HF) with hydrochloric acid (HCl) etc, divide oxide and HCl can reduce the leftover amount of oxygen element effectively, what HF can be caused effectively except carbon and hydrocarbon is smudgy.

Photoetching

• Gelatinize: Glue of a photoetching, it is a kind of sensitive to specific light polymer data normally.
• Exposure: The light of edition of film of use attack by surprise and specific wavelengh (like ultraviolet ray) undertake illuminate to photoetching glue, the figure on edition of film of attack by surprise move reachs on photoetching glue, make photoetching glue produces chemical change in exposure area.
• Develop: Pass chemical solution will not the photoetching glue purify after exposure or exposure, keep needs figure, these graphs will define each area of the chip in follow-up craft, if the active area of transistor, electrode contacts an area,wait.

Engrave corrode

• Dry method engraves corrode: Relatively commonly used, use inductance coupling plasma for example (ICP) ion of quarter corrode, reaction engraves corrode (RIE) or the electron is whirly resonance (ECR) the method such as quarter corrode. Produce in the quantity in, what use ICP technology at present is more, use commonly chloric base (Cl radical) gas. But also can use CH3+H2, quarter corrode child is Ga (CH3) 3, its have child volatile the characteristic with low rate of good, quarter corrode. Through engraving the GaN data that corrode purify does not need, the groove of the structure that forms transistor according to the graph on photoetching glue and circuit wiring.

Contact of semiconductor of metal of Xiao Te radical is formed

• Xiaoteji contacts grid: The Xiaoteji that has rectification character is formed to contact in grid area. The quality of bar of Xiao Te radical is right transistor of tall electron mobility (HEMT) character is crucial, bar leakage of electricity is the main source of low frequency noise, retrorse puncture voltage decided bar the working voltage of parts of an apparatus and power tolerance.
• Source pole and leakage are extremely ohmic contact: source pole and region of leakage polar region form ohmic contact, in order to ensure good electric current is conducted. Waiting to LED and LD product also is to form ohmic contact.

Metallic layer deposit and design are changed

• Metallic deposit: Enrage photograph deposit through physics (PVD, if splash,shoot) or deposit of chemical gas phase (CVD) wait for a method, in layer of metal of chip surface deposit, be like aluminium (Al) , titanium (Ti) , gold (Au) etc, use at forming electrode, interrelate the circuit structure such as the line.
• Metallic design changes: Use photoetching and quarter corrode technology again, undertake to deposit metallic layer design is changed, in order to define an each electrode and interrelate the appearance of the line and position.

Anneal

• Optimize function: Undertake to chip anneal is handled, temperature and the atmosphere with be in certain normally undertake below the condition. Anneal can improve the osculatory performance between metal and semiconductor, reduce interfacial blemish, raise the electricity function of chip and dependability.

Electric function test and choose

• Test parameter: Undertake to finishing manufacturing chip overall electric performance checks, include but not electric current of be confined to – voltage (I-V) voltage of characteristic, switch character, puncture, guide of the parameter such as electrify block measure.
• Choose classification: Undertake filtration classificationing to chip according to checking a result, the chip with unqualified eliminate, ensure the product of consign satisfies quality and function requirement.

Enclose

• Protect chip: eligible chip installation arrives in enclosing crust, use enclose material and technology suitably to undertake to chip sealed with protection, in order to avoid the outside ambient effect to chip, offer at the same time with interface of exterior circuit connective. Enclose a form commonly to the surface sticks outfit type (SMD) , insert type to wait continuously.
• Extremely Xiaoteji contacts: The Xiaoteji that has rectification character is formed to contact in grid area. The quality of bar of Xiao Te radical is right transistor of tall electron mobility (HEMT) character is crucial, bar leakage of electricity is the main source of low frequency noise, retrorse puncture voltage decided bar the working voltage of parts of an apparatus and power tolerance.
• Source pole and leakage are extremely ohmic contact: source pole and region of leakage polar region form ohmic contact, in order to ensure good electric current is conducted. Waiting to LED and LD product also is to form ohmic contact.

Metallic layer deposit and design are changed

• Metallic deposit: Enrage photograph deposit through physics (PVD, if splash,shoot) or deposit of chemical gas phase (CVD) wait for a method, in layer of metal of chip surface deposit, be like aluminium (Al) , titanium (Ti) , gold (Au) etc, use at forming electrode, interrelate the circuit structure such as the line.
• Metallic design changes: Use photoetching and quarter corrode technology again, undertake to deposit metallic layer design is changed, in order to define an each electrode and interrelate the appearance of the line and position.

Anneal

• Optimize function: Undertake to chip anneal is handled, temperature and the atmosphere with be in certain normally undertake below the condition. Anneal can improve the osculatory performance between metal and semiconductor, reduce interfacial blemish, raise the electricity function of chip and dependability.

Electric function test and choose

• Test parameter: Undertake to finishing manufacturing chip overall electric performance checks, include but not electric current of be confined to – voltage (I-V) voltage of characteristic, switch character, puncture, guide of the parameter such as electrify block measure.
• Choose classification: Undertake filtration classificationing to chip according to checking a result, the chip with unqualified eliminate, ensure the product of consign satisfies quality and function requirement.

Enclose

• Protect chip: eligible chip installation arrives in enclosing crust, use enclose material and technology suitably to undertake to chip sealed with protection, in order to avoid the outside ambient effect to chip, offer at the same time with interface of exterior circuit connective. Enclose a form commonly to the surface sticks outfit type (SMD) , insert type to wait continuously.