The development course of the NAND Flash technology of China state electron

The NAND Flash technology of China state electron develops course to basically be as follows:

• 2012: Develop Flash of 58 Nai rice to make Cheng technology quantity produce independently, for technology of follow-up NAND Flash development lays the foundation that make Cheng.
• 2013: In December, develop NAND Flash of 46 Nai rice to make success of Cheng technology test and verify independently, the mark is worn its obtain significant breakthrough on NAND Flash technology, enter the more advanced phase that make Cheng.
• 2014: Roll out 1Gb above shine put, offerred more the encode type of high capacity shines put a solution, contented market is right the demand of higher memory capacity.
• 2016: 38nm DRAM passes test and verify, although basically be DRAM relevant, but boost capacity what also mirrorred its to go up in the advanced technology that make Cheng continuously, to NAND Flash technology development has certain technology to spill over effect.
• 2024: Its shine put a product to make Cheng gradual progress to 24 accept rice, NAND Flash is making Cheng on promotion of contractible, function and cost control further, the product is being brushed write the respect such as speed, capacity to have better performance, for example Octal NAND is had super- brush quickly keep rate, can efficient executive OTA upgrades, and cost photograph relatively the NOR Flash at the tradition is more cheap.