The function characteristic of chip of Fu Manwei GaN

GaN chip of Fu Manwei has marked characteristic in performance side. Its have high frequency and efficient character, excellent stability and dependability can maintain below environment of high frequency work. Compare traditional chip, of GaN chip guide electrify block is lower, can reduce energy loss effectively, raise power source to change efficiency. For example, in filling application quickly, can come true faster charge speed, shorten greatly charge time. In the meantime, gaN chip still has high temperature resistant advantage, can move normally in relatively harsh work environment, ensure the stability of equipment and wear.

The function characteristic of chip of Fu Manwei GaN is as follows:

• Tall compositive degree: For example relevant chip NF7307 is compositive the function such as the resistor that start and X capacitance discharge, can simplify periphery circuit design, save space and cost.
• Outstanding power source manages property:
• Admirable QR (accurate resonance) characteristic: Can realize more efficient energy changeover, reduce switch loss, improve power source efficiency, conduce to reduce waste of the sources of energy and calorific problem.
• Low bide one’s time power comsumption: Reduce equipment effectively to be in bide one’s time the electric energy below condition is used up, accord with the requirement of contemporary electron equipment to energy-saving environmental protection.

• Have a variety of protection mechanisms: Had had the multiple protection function such as power, overvoltage, short circuit, can increase systematic security and stability, reduce the risk that equipment damages because of unusual situation, ensured use dependability.
• Limits of wide job voltage: For example chip of a few GaN applicably at more extensive job voltage, setting of contented and can different application falls to input the requirement of voltage to power source, enhanced the versatility of chip and adaptability.
• Support high power output: In the 3rd generation semiconductor GaN fills a domain quickly, have can match of GaN in high power (≥ 65W) advocate control the product such as chip, can satisfy pair of requirement that high-power charges or power source changes, apply to the electronic fixture that fills adapter of charger, high-power quickly to have higher demand to power with etc.